Effect of ageing on X-ray induced dopant passivation in MOS capacitors

Semiconductor Science and Technology

Volumn 15, Issue 8, 2000, Pages 794-798

  De Vasconcelos, E A ^a,c   Da Silva Jr , E F ^a   Khoury, H J ^a   Freire, V N ^b  

^a FEDERAL UNIVERSITY OF PERNAMBUCO   (Brazil)

^b FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

^c SAITAMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; BORON; COMPOSITION EFFECTS; INTERFACES (MATERIALS); PASSIVATION; PHOSPHORUS; RADIATION EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; WATER ABSORPTION; X RAYS;

DOPANT PASSIVATION;

MOS CAPACITORS;

EID: 0034246327     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/8/302     Document Type: Article

References (29)

1. Shaneyfelt M R, Fleetwood D M, Schwank J R, Meisenheimer T L and Winokur PS 1994 IEEE Trans. Nucl. Sci. 41 2550
2. Shaneyfelt M R, Winokur P S, Fleetwood D M, Schwank J R and Reber R A Jr 1996 IEEE Trans. Nucl. Sci. 43 865
3. Shaneyfelt M R, Winokur P S, Fleetwood D M, Hash G L, Schwank J R, Sexton F W and Pease R L 1997 IEEE Trans. Nucl. Sci. 44 2040
4. Sah C T 1996 Fundamentals of Solid-State Electronics - Solution Manual (Singapore: World Scientific) p 102
5. 2/Si Interface vol 3, ed H Z Massoud, E H Poindexter and C R Helms (Pennington: Electrochemical Society) p 525
6. Poindexter E H and Helms C R 1994 Rep. Prog. Phys. 57 791
7. Poindexter E H 1995 J. Non-Cryst. Solids 187 257
8. 2/Si Interface vol 3, ed H Z Massoud, E H Poindexter and C R Helms (Pennington: Electrochemical Society) p 172
9. Sah C T 1988 Properties of Silicon (London: Institution of Electrical Engineers) p 584
10. Sah C T 1996 Fundamentals of Solid-State Electronics - Solution Manual (Singapore: World Scientific) p 141
11. Pearton J, Corbett W and Stavola M 1992 Hydrogen in Crystalline Semiconductors (Berlin: Springer) p 63
12. Fleetwood D M, Johnson M J, Meisenheimer T L, Winokur P S, Warren W L and Witczak S C 1997 IEEE Trans. Nucl. Sci. 44 1810
13. de Vasconcelos E A and da Silva E F Jr 1998 Semicond. Sci. Technol. 13 1313
14. Krauser J, Wulf F and Braunig D 1995 J. Non-Cryst. Solids 187 265
15. 2/Si Interface vol 3, ed H Z Massoud, E H Poindexter and C R Helms (Pennington: Electrochemical Society) p 184
16. Gale R, Feigl F J, Magee C W and Young D R 1983 J. Appl. Phys. 54 6938
17. Sah C T 1990 Solid-State Electron. 33 147
18. Cartier E, Buchanan D A, Stathis J H and DiMaria D J 1995 J. Non-Cryst. Solids 187 257
19. da Silva E F Jr, Nishioka Y and Ma T P 1987 IEEE Trans. Nucl. Sci. 34 1190
20. de Vasconcelos E A and da Silva E F Jr 1997 Semicond. Sci. Technol. 12 1032
21. Nicollian E H and Brews J R 1982 MOS Physics and Technology (New York: Wiley) ch 5
22. Chen A J, Dadgar S, Hsu C C H, Pan S C S and Sah C T 1986 J. Appl. Phys. 60 1391
23. Afanasev V V, de Nijs J M M and Balk P 1995 J. Non-Cryst. Solids 187 248
24. Wang X, Wang Y, Wang D and Ma T P 1992 IEEE Trans. Nucl. Sci. 39 2252
25. Bongiorno A, Colombo L and Trioni M I 1997 J. Non-Cryst. Solids 216 30
26. Pensl G, Roos G, Holm C, Sirtl E and Johnson N M 1987 Appl. Phys. Lett. 51 451
27. Wei C C and Ma T P 1984 Appl. Phys. Lett. 45 900
28. Sah C T, Sun J Y and Tzou J J 1983 J. Appl. Phys. 54 944
29. Sah C T, Sun J Y and Tzou J J 1983 Appl. Phys. Lett. 43 204