Using surface charge analysis to characterize the radiation response of Si/SiO2 structures

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3686-3691

  Stacey, J W ^a   Schrimpf, R D ^a   Fleetwood, D M ^a   Holmes, K C ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

Capacitance voltage (C V); Metal oxide semiconductor (MOS); Radiation effects; Surface charge analyzer (SCA)

Indexed keywords

CARRIER CONCENTRATION; DOSIMETRY; ELECTRIC CHARGE; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRAPS; MOS DEVICES; RADIATION EFFECTS; SILICON;

CAPACITANCE-VOLTAGE (C-V) MEASUREMENTS; METAL OXIDE SEMICONDUCTOR (MOS); RADIATION RESPONSE; SURFACE CHARGE ANALYZER (SCA);

SILICA;

EID: 11044228348     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839259     Document Type: Conference Paper

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