The C-V-f and G/ω-V-f characteristics of Au/SiO2/n-Si capacitors

Physica B: Condensed Matter

Volumn 391, Issue 1, 2007, Pages 59-64

  Dökme, I ^a   Altindal, Ş ^b  

^a AHI EVRAN UNIVERSITY   (Turkey)

^b GAZI UNIVERSITY   (Turkey)

Author keywords

Frequency dependence; Interface states; MOS structure; Series resistance

Indexed keywords

CAPACITANCE; DIODES; ELECTRIC RESISTANCE; ELECTRONIC DENSITY OF STATES; FILM GROWTH; SILICA;

FREQUENCY DEPENDENCE; FREQUENCY DISPERSION; INTERFACE STATES DENSITY; SERIES RESISTANCE;

MOS CAPACITORS;

EID: 33846829909     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2006.08.049     Document Type: Article

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