Au/SnO 2/n-Si (MOS) structures response to radiation and frequency

Microelectronics Journal

Volumn 34, Issue 11, 2003, Pages 1043-1049

  Tataroglu A ^a   Altindal, S ^a   Karadeniz, S ^b   Tugluoglu N ^b  

^a GAZI UNIVERSITY   (Turkey)

^b Ankara Nuclear Research and Training Center   (Turkey)

Author keywords

rays; Interface states; MOS; MOS structure; Radiation effect; Series resistance

Indexed keywords

INTERFACE STATES;

CAPACITANCE; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GAMMA RAYS; INTERFACES (MATERIALS);

MOS DEVICES;

EID: 0142154040     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2003.09.003     Document Type: Article

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