Observation of Rabi splitting in a bulk GaN microcavity grown on silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 15, 2003, Pages 1533131-1533134

  Antoine Vincent, N ^a   Natali, F ^b   Byrne, D ^b   Vasson, A ^a   Disseix, P ^a   Leymarie, J ^a   Leroux, M ^b   Semond, F ^b   Massies, J ^b  

^a UNIVERSITÉ CLERMONT AUVERGNE   (France)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; NITROGEN; SILICON;

ARTICLE; CALCULATION; CHEMICAL BINDING; DIELECTRIC CONSTANT; ELECTRICITY; LIGHT REFLECTION; LIGHT RELATED PHENOMENA; MEASUREMENT; OBSERVATION; OPTICS; OSCILLATOR; PHOTON; SIMULATION;

EID: 0344153435     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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