Reliability and early failure in Cu/oxide dual-damascene interconnects

Journal of Electronic Materials

Volumn 31, Issue , 2002, Pages 1052-1058

  Ogawa, Ennis T ^a   Lee, Ki Don ^a   Matsuhashi, Hideki ^b   Blaschke, Volker A ^c,d   Havemann, Robert H ^e  

^a TEXAS INSTRUMENTS   (United States)

^b PDF SOLUTIONS INC   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^d Rockwell Semiconductor Systems   (United States)

^e NOVELLUS SYSTEMS INC   (United States)

Author keywords

Blech effect; Critical length effect; Cu interconnects; Cu reliability; Dual damascene; Early failure; Electromigration; Reliability physics; Short length effect; Weakest link approximation

Indexed keywords

APPROXIMATION THEORY; COPPER OXIDES; ELECTROMIGRATION; ETCHING; INTERCONNECTION NETWORKS; RELIABILITY;

DUAL-DAMASCENE INTERCONNECTS;

MICROELECTRONICS;

EID: 0036809487     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0042-6     Document Type: Article

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