Electromigration reliability of dual-damascene Cu/porous methylsilsesquioxane low k interconnects

Applied Physics Letters

Volumn 82, Issue 13, 2003, Pages 2032-2034

  Lee, Ki Don ^a   Ogawa, Ennis T ^a   Yoon, Sean ^a   Lu, Xia ^a   Ho, Paul S ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COPPER; CURRENT DENSITY; DIELECTRIC MATERIALS; ION BEAMS; PROBES; SURFACE CHEMISTRY; THERMOMECHANICAL TREATMENT;

FOCUSED ION BEAM (FIB) MICROPROBES;

ELECTROMIGRATION;

EID: 0037474942     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1564294     Document Type: Article

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