Structural and electronic properties of barium silicide on Si(100)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 7 B, 2002, Pages 4965-4968

  Ojima, Kaoru ^a,b   Yoshimura, Masamichi ^b   Ueda, Kazuyuki ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

Barium (Ba); Scanning tunneling microscopy (STM); Scanning tunneling spectroscopy (STS); Silicide; Silicon (Si)

Indexed keywords

ELECTRONIC DENSITY OF STATES; ELECTRONIC PROPERTIES; ENERGY GAP; FERMI LEVEL; MONOLAYERS; PHOTOELECTRON SPECTROSCOPY; RAPID THERMAL ANNEALING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; THERMAL EFFECTS; ULTRAVIOLET SPECTROSCOPY;

METASTABLE DE-EXCITATION SPECTROSCOPY (MDS); SCANNING TUNNELING SPECTROSCOPY (STS); ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY (UPS);

BARIUM COMPOUNDS;

EID: 0036657746     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.4965     Document Type: Conference Paper

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