Assessment of temperature and voltage accelerating factors for 2.3-3.2 nm SiO2 thin oxides stressed to hard breakdown

Microelectronics Reliability

Volumn 48, Issue 3, 2008, Pages 335-341

  Pic, D ^a,b   Goguenheim, D ^a   Ogier, J L ^b  

^a Institut Superieur de l'Electronique et du Numerique   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DATABASE SYSTEMS; ELECTRIC BREAKDOWN; ERROR DETECTION; LIMITERS;

ERROR EVALUATION; OPERATING VOLTAGE; STRESS POLARITY; VOLTAGE EXTRAPOLATION MODELS;

SILICA;

EID: 39449121077     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.08.006     Document Type: Article

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