Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current

Applied Physics Letters

Volumn 89, Issue 22, 2006, Pages

  Chen, J ^a   Sekiguchi, T ^a   Fukata, N ^a   Takase, M ^a   Chikyow, T ^a   Yamabe, K ^b   Hasunuma, R ^b   Akasaka, Y ^c   Inumiya, S ^c   Nara, Y ^c   Yamada, K ^d  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^d WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; INDUCED CURRENTS; LEAKAGE CURRENTS;

ELECTRON BEAM INDUCED CURRENT (EBIC); GATE BIAS; GATE DIELECTRICS; HAFNIUM SILICON OXYNITRIDES;

DIELECTRIC MATERIALS;

EID: 33751559564     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2392988     Document Type: Article

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