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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 29-32, 2007, Pages

Growth rate enhancement of (0001̄)-face silicon-carbide oxidation in thin oxide regime

(4) Yamamoto, Takeshi a Hijikata, Yasuto a Yaguchi, Hiroyuki a Yoshida, Sadafumi a

a SAITAMA UNIVERSITY (Japan)

Author keywords

(0001 ) C face; Deal Grove model; In situ ellipsometry; Massoud empirical equation; Oxidation; Silicon carbide (SiC)

Indexed keywords

ELLIPSOMETRY; GROWTH RATE; MATHEMATICAL MODELS; REACTION RATES; THERMOOXIDATION;

DEAL-GROVE MODEL; IN-SITU ELLIPSOMETRY; MASSOUD EMPIRICAL EQUATION; OXIDATION RATES;

SILICON CARBIDE;

EID: 34548458164 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.L770 Document Type: Article

Times cited : (39)

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