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Volumn 41, Issue 7, 1997, Pages 929-934

Thermal oxidation of silicon in the ultrathin regime

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; MATHEMATICAL MODELS; REACTION KINETICS; SEMICONDUCTING SILICON; SILICA; THERMAL EFFECTS; THERMOOXIDATION;

EID: 0031192360     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00001-4     Document Type: Article
Times cited : (21)

References (23)
  • 7
    • 0025664668 scopus 로고
    • ed. H. R. Huff et al., The Electrochemical Society, Pennington, New Jersey, PV 90-7
    • Ward, R. R., Massoud, H. Z. and Fair, R. B., in Semiconductor Silicon, ed. H. R. Huff et al., The Electrochemical Society, Pennington, New Jersey, PV 90-7, 1990, p. 405.
    • (1990) Semiconductor Silicon , pp. 405
    • Ward, R.R.1    Massoud, H.Z.2    Fair, R.B.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.