Repair of thin thermally grown silicon dioxide by anodic oxidation

Electrochimica Acta

Volumn 53, Issue 8, 2008, Pages 3395-3402

  Chen, Li ^a   Zhou, Yinglin ^a   Krause, Steffi ^a   Munoz, Andres G ^b   Kunze, Julia ^b   Schmuki, Patrik ^b  

^a QUEEN MARY UNIVERSITY OF LONDON   (United Kingdom)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Anodic oxidation; Field effect capacitor; Leakage current; Silicon; Thermally grown silicon dioxide

Indexed keywords

ANODIC OXIDATION; FILM THICKNESS; LEAKAGE CURRENTS; POTENTIOMETRIC SENSORS; SEMICONDUCTOR DEVICES; THIN FILMS;

ELECTROLYTE-INSULATOR-SEMICONDUCTOR (EIS) DEVICES; FIELD-EFFECT CAPACITOR; METAL-INSULATOR-SEMICONDUCTOR (MIS); SCANNING PHOTO-INDUCED IMPEDANCE MICROSCOPY (SPIM); THERMAL ANNEALING;

SILICA;

EID: 38749125488     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2007.11.065     Document Type: Article

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