Improvement in electrical characteristics of ultrathin thermally grown SiO2 by selective anodic oxidation

IEEE Electron Device Letters

Volumn 23, Issue 12, 2002, Pages 707-709

  Paily, Roy ^a   DasGupta, Amitava ^a   DasGupta, Nandita ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

Dielectric thin films; Leakage currents; MOS capacitors; Reliability testing

Indexed keywords

DIELECTRIC FILMS; ELECTRIC CURRENT CONTROL; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; MOS CAPACITORS; RELIABILITY; SEMICONDUCTOR GROWTH; SILICA; THERMAL EFFECTS; VOLTAGE CONTROL;

SELECTIVE ANODIC OXIDATION; THERMALLY GROWN SILICA; ULTRATHIN GATE OXIDES; ULTRATHIN SILICA;

ULTRATHIN FILMS;

EID: 0037005454     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.805742     Document Type: Letter

References (8)

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