Electrical characterization of metal-oxide-semiconductor capacitors with anodic and plasma-nitrided oxides

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 2, 2000, Pages 676-680

  Landsberger, L M ^a   Ghayour, R ^a   Sayedi, M ^a   Kahrizi, M ^a   Landheer, D ^b   Bardwell, J A ^b   Riopel, Y ^c   Jean, C ^c   Logiudice, V ^c  

^a Gina Cody School of Engineering and Computer Science   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c Semiconductor Division   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ELECTRON CYCLOTRON RESONANCE; FILM GROWTH; HOLE TRAPS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; NITRIDING; OXIDES; PLASMAS; RAPID THERMAL ANNEALING; THERMAL EFFECTS; THIN FILMS;

ANODIC OXIDES; PLASMA NITRIDED OXIDES; POLYSILICON GATE TEST STRUCTURES; TRAPPED CHARGE;

MOS CAPACITORS;

EID: 0034155496     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582250     Document Type: Article

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