A model to study the effect of selective anodic oxidation on ultrathin gate oxides

IEEE Transactions on Electron Devices

Volumn 52, Issue 1, 2005, Pages 118-121

  Marathe, Vaibhav G ^a   Paily, Roy ^a   DasGupta, Amitava ^a   DasGupta, Nandita ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

Anodic oxidation; Gate leakage current; Gate oxide; Metal oxide semiconductor (MOS) capacitors

Indexed keywords

ANODIC OXIDATION; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES;

GATE LEAKAGE CURRENT; ULTRATHIN GATE OXIDES;

MOS CAPACITORS;

EID: 12344312305     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.841284     Document Type: Article

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