High resolution LAPS using amorphous silicon as the semiconductor material

Sensors and Actuators, B: Chemical

Volumn 103, Issue 1-2, 2004, Pages 436-441

  Moritz, Werner ^a   Yoshinobu, Tatsuo ^b   Finger, Friedhelm ^c   Krause, Steffi ^d   Martin Fernandez, Marisa ^e   Schöning, Michael J ^f  

^a HUMBOLDT UNIVERSITY   (Germany)

^b OSAKA UNIVERSITY   (Japan)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d QUEEN MARY UNIVERSITY OF LONDON   (United Kingdom)

^e DARESBURY LABORATORY   (United Kingdom)

^f AACHEN UNIVERSITY OF APPLIED SCIENCES   (Germany)

Author keywords

Amorphous Si; LAPS; Photocurrent; Semiconductor

Indexed keywords

AMORPHOUS SILICON; ELECTRIC INSULATORS; GLASS; LIGHT SCATTERING; MICROSCOPIC EXAMINATION; PHOTOCURRENTS; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; THIN FILMS;

LATERAL RESOLUTION; LIGHT-ADDRESSABLE POTENTIOMETRIC SENSORS (LAPS); METAL-INSULATOR-SEMICONDUCTOR (MIS) STRUCTURE; SCANNING PHOTO-INDUCED IMPEDANCE MICROSCOPY (SPIM);

POTENTIOMETRIC SENSORS;

EID: 14744282675     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2004.04.073     Document Type: Conference Paper

References (12)

1. Hafeman D.G., Parce J.W., McConnell H.M. Light-addressable potentiometric sensor for biochemical systems. Science. 240:1988;1182-1185
2. Krause S., Talabani H., Xu M., Moritz W., Griffiths J. Scanning photo-induced impedance microscopy - an impedance based imaging technique. Electrochimica Acta. 47:2002;2143-2148
3. Nakao M., Yoshinobu T., Iwasaki H. Improvement of spatial resolution of a laser-scanning pH-imaging sensor. Jpn. J. Appl. Phys. 33:1994;L 394, 397
4. Ito Y. High-spatial resolution LAPS. Sens. Actuators, B: Chemical. 52:1998;107-111
5. Yoshinobu T., Nakao M., Inoue S., Iwasaki H. High-resolution pH imaging sensor for microscopic observation of microorganisms. Sens. Actuators, B: Chemical. 34:1996;234-239
6. George M., Parak W.J., Gerhardt I., Moritz W., Kaesen F., Geiger H., Eisele I., Gaub H.E. Investigation of the spatial resolution of the light-addressable potentiometric sensor. Sens. Actuators, A: Physical. 86:2000;187-196
7. Parak W.J., Hofmann U.G., Gaub H.E., Owicki J.C. Lateral resolution of light-addressable potentiometric sensors: An experimental and theoretical investigation. Sens. Actuators, A: Physical. 63:1997;47-57
8. Hedborg E., Winquist F., Sundgren H., Lundstrom I. Charge migration on hydrophobic and hydrophilic silicon dioxide. Thin Solid Films. 340:1999;250-256
9. Holmberg M., Lundstrom I. A new method for the detection of hydrogen spillover. Appl. Surf. Sci. 93:1996;67-76
10. Filippini D., Lundström I. Hydrogen detection on bare SiO2 between metal gates. J. Appl. Phys. 91:2002;3896-3903
11. Moritz W., Gerhardt I., Roden D., Xu M., Krause S. Photocurrent measurements for laterally resolved interface characterisation. Fresenius J. Anal. Chem. 367:2000;329-333
12. van den Heuvel J.C., van Oort R.C., Geerts M.J. Diffusion lenght measurements of thin amorphous silicon layers. Solid State Commun. 69:1989;807-810