Si and Zn co-doped InGaN-GaN white light-emitting diodes

IEEE Transactions on Electron Devices

Volumn 50, Issue 2, 2003, Pages 519-521

  Chang, S J ^a   Wu, L W ^a   Su, Y K ^a   Kuo, C H ^a   Lai, W C ^a   Hsu, Y P ^a   Sheu, J K ^b   Chen, J F ^a   Tsai, J M ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c South Epitaxy Corporation   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; GALLIUM NITRIDE; HETEROJUNCTIONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SILICON; ZINC;

DOUBLE HETEROSTRUCTURES;

LIGHT EMITTING DIODES;

EID: 0038056271     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.808525     Document Type: Article

References (15)

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