Improvements on interface reliability and capacitance dispersion of fluorinated ALD-Al2 O3 gate dielectrics by C F4 plasma treatment

Journal of the Electrochemical Society

Volumn 155, Issue 3, 2008, Pages

  Fan, Kung Ming ^a   Lai, Chao Sung ^a,c   Peng, Hsing Kan ^a   Lin, Shian Jyh ^b   Lee, Chung Yuan ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NANYA TECHNOLOGY CORPORATION   (Taiwan)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CAPACITANCE; GATE DIELECTRICS; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

CAPACITANCE DISPERSION; OXIDE RELIABILITY; PLASMA SURFACE TREATMENT;

ALUMINUM;

EID: 38349149076     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2823038     Document Type: Article

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