Improvement of ultrathin gate oxide and oxynitride integrity using fluorine implantation technique

Applied Physics Letters

Volumn 70, Issue 1, 1997, Pages 37-39

  Chowdhury, Prasenjit ^a,b   Chou, Anthony I ^a   Kumar, Kiran ^a,c   Lin, Chuan ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

^b INTEL CORPORATION   (United States)

^c AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003090054     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119297     Document Type: Article

References (13)

1. P. Olivo, T. N. Nguyen, and B. Ricco, IEEE Electron Device Lett. 35, 2259 (1988).
2. K. Naruke, S. Taguchi, and M. Wada, IEDM Tech. Dig. 424 (1988).
3. W.-S. Lu and J.-G. Hwu, IEEE Electron Device Lett. 17, 172 (1996).
4. K. Ohyu, T. Itoga, Y. Nishioka, and N. Natsuaki, Jpn. J. Appl. Phys. 1 28, 1041 (1989).
5. Y. Nishioka, K. Ohyu, Y. Ohji, N. Natuaki, K. Mukai, and T. P. Ma, IEEE Electron Device Lett. 10, 141 (1989).
6. L. Vishnubhotla, T. P. Ma, H.-H. Tseng, and P. J. Tobin, Appl. Phys. Lett. 59, 3595 (1991).
7. P. J. Wright and K. C. Saraswat, IEEE Trans. Electron Devices 36, 879 (1989).
8. K. P. MacWilliams, L. F. Halle, and T. C. Zietlow, IEEE Electron Device Lett. 11, 3 (1990).
9. P. J. Wright, N. Kasai, S. Inoue, and K. Saraswat, IEEE Electron Device Lett. 10, 347 (1989).
10. P. J. Wright, N. Kasai, S. Inoue, and K. Saraswat, IEEE Electron Device Lett. 10, 347 (1989).
11. C. Felsch and E. Rosenbaum, Proceedings of the 1995 IEEE International Reliability Physics Symposium, p. 142.
12. N. Yasuda, N. Patel, and A. Toriumi, SSDM, p. 847, 1993.
13. E. Hasegawa, A. Ishitani, K. Akimoto, Masaru Tsukiji, and N. Ohta, J. Electrochem. Soc. 142, 273 (1995).