Influence of cooling rate after high temperature annealing on deep levels in high-purity semi-insulating 4H-SiC

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 371-374

  Gällström, Andreas ^a   Magnusson, Björn ^a,b   Carlsson, Patrick ^a   Son, N T ^a   Henry, Anne ^a   Beye, Franziska ^a   Syväjärvi, Mikael ^a   Yakimova, Rositza ^a   Janzén, Erik ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Norstel AB   (Sweden)

Author keywords

Cooling rate; Deep level defects; High temperature annealing

Indexed keywords

ANNEALING; SILICON CARBIDE;

AFTER HIGH TEMPERATURE; COOLING RATES; DEEP-LEVEL DEFECTS; HIGH-PURITY SEMI-INSULATING 4H-SIC; HIGH-TEMPERATURE ANNEALING; IV CHARACTERISTICS; SILICON VACANCIES; SUBSEQUENT COOLING;

COOLING;

EID: 38149025039     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.371     Document Type: Conference Paper

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