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Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 12, 2007, Pages 4230-4240

Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates

(9) Rudzinski M a Jezierska, E b Weyher, J L a,c Macht, L a Hageman, P R a Borysiuk, J b Rodle T C d Jos, H F F d Larsen, P K a

a RADBOUD UNIVERSITY NIJMEGEN (Netherlands)

b WARSAW UNIVERSITY OF TECHNOLOGY (Poland)

c INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

d NXP SEMICONDUCTORS (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT FORMATION; DEFECT-SELECTIVE ETCHING; MISORIENTED SUBSTRATE;

DEFECTS; EPILAYERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 38049108358 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200723324 Document Type: Article

Times cited : (19)

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