Origin of cracks in GaN/AlGaN DH structure grown on 6H-SiC by metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 193-196

  Yamamoto, J ^a   Kurimoto, M ^a   Shibata, M ^a   Honda, T ^a   Kawanishi, H ^a  

^a KOGAKUIN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRACKS; HETEROJUNCTIONS; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES; THERMAL EXPANSION;

DOUBLE HETERO (DH) STRUCTURES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032090758     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00200-0     Document Type: Article

References (7)

1. R.F. Davis, J. Crystal Growth 137 (1994) 161.
2. W. Shan, A.J. Fischer, J.J. Song, G.E. Bulman, H.S. Kong, M.T. Leonard, W.G. Perry, M.D. Bremser, R.F. Davis, Appl. Phys. Lett. 69 (1996) 740.
3. J.F. Schetzina, Proc. Int. Symp. on Blue Laser and Light Emitting Diodes, 1996.
4. V.A. Dmitriev, K. Irvine, C.H. Carter Jr., A.S. Zubrilov, D.V. Tsvetkov, Appl. Phys. Lett. 67 (1995) 115.
5. A. Kuramata, K. Horino, K. Domen, R. Soejima, H. Sudo, T. Tanahashi, Proc. Int. Symp. on Blue Laser and Light Emitting Diodes, 1996.
6. J. Sumakeris, Z. Sitar, K.S. Ailey-Trent, K.L. More, R.F. Davis, Thin Solid Films 225 (1993) 244-249.
7. I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, N. Sawaki, J. Crystal Growth 98 (1989) 209-219.