Influence of the misorientation of 4H-SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2141-2144

  Rudzinski M ^a   Hageman, P R ^a   Grzegorczyk, A P ^a   Macht, L ^a   Rodle T C ^b   Jos, H F F ^b   Larsen, P K ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CRACK INITIATION; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SUBSTRATES;

CRACK-FREE LAYERS; GAN EPILAYERS; STRUCTURAL QUALITY; SUBSTRATE MISORIENTATION;

SILICON CARBIDE;

EID: 27344442264     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461455     Document Type: Conference Paper

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