Excitonic transitions in MBE grown h-GaN with cubic inclusions

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 682-686

  Strauf, Stefan ^a   Michler, Peter ^a   Gutowski, Jürgen ^a   Selke, Hartmut ^a   Birkle, Udo ^a   Einfeldt, Sven ^a   Hommel, Detlef ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

Cubic inclusions; Dislocations; Excitons in wurtzite GaN

Indexed keywords

BINDING ENERGY; DISLOCATIONS (CRYSTALS); ELECTRON TRANSITIONS; ENERGY GAP; EXCITONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

CUBIC INCLUSIONS; GALLIUM NITRIDE; LATTICE MISMATCH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032090812     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00252-8     Document Type: Article

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