Growth evolution of cubic-GaN on sapphire (0 0 0 1) substrate by metalorganic molecular beam epitaxy

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 437-440

  Suda, Jun ^a   Kurobe, Tatsuro ^a   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DEPOSITION; MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTOR GROWTH; SUBSTRATES;

METALORGANIC MOLECULAR BEAM EPITAXY (MOMBE);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032688630     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01370-0     Document Type: Article

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