Selective epitaxial growth of GaAs using dimethylgalliumchloride by multi-wafer low-pressure metal organic vapor phase epitaxy (LP-MOVPE)

Journal of Crystal Growth

Volumn 203, Issue 4, 1999, Pages 464-472

  Yokoyama, Mitsunori ^a   Matsukura, Yusuke ^a   Tanaka, Hitoshi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; FIELD EFFECT TRANSISTORS; METALLORGANIC VAPOR PHASE EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR GROWTH;

DIMETHYLGALLIUMCHLORIDE; SELECTIVE EPITAXIAL GROWTH;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033148801     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00111-6     Document Type: Article

References (18)

1. Kuech T.F., Tischler M.A., Potemski R. Appl. Phys. Lett. 54:1989;910.
2. Kuech T.F. Mater. Res. Soc. Symp. Proc. 144:1989;41.
3. Nakai K., Ozeki M. J. Crystal Growth. 68:1984;200.
4. Hiruma K., Haga T., Miyazaki M. J. Crystal Growth. 102:1990;717.
5. Sakuma Y., Muto S., Yokoyama N. IEICE Trans. Electron. E77-C:1994;1414.
6. Kuech T.F., Goorsky M.S., Tischler M.A., Palevski A., Solomon P., Potemski R., Tsai C.S., Lebens J.A., Vahala K.J. J. Crystal Growth. 107:1991;116.
7. Yamaguchi K., Okamoto K. J. Appl. Phys. 29:1990;1408.
8. Nakayama Y., Ohkawa S., Ishikawa H. Fujitsu Sci. Technol. J. 13:1977;53.
9. Mori K., Yoshida M., Usui A., Terao H. Appl. Phys. Lett. 52:1988;27.
10. Hara N., Shiina K., Ohori T., Kasai K., Komeno J. J. Appl. Phys. 74:1993;1327.
11. Korte L., Thanner Chr., Huber M., Hoyer Ch. J. Crystal Growth. 124:1992;220.
12. Shimoyama K., Inoue Y., Fujii K., Gotoh H. J. Crystal Growth. 124:1992;235.
13. Shimoyama K., Hosoi N., Fujii K., Gotoh H. J. Crystal Growth. 145:1994;283.
14. Nataf G., Leroux M., Laügt S.M., Gibart P. J. Crystal Growth. 165:1996;1.
15. Shaw D.W. J. Electrochem. Soc. 113:1966;904.
16. Shiraishi Y., Furuhata N., Okamoto A. J. Crystal Growth. 182:1997;255.
17. Mooradian A., McWhorter A.L. Phys. Rev. Lett. 19:1967;849.
18. Schwartz G.P., Gualtieri G.J., Dubois L.H., Bonner W.A., Ballman A.A. J. Electrochem. Soc. Solid-state Sci. Technol. 131:1984;1716.