Selective growth of Gaas and Al0.35Ga0.65As on GaAs patterned substrates by HCl assisted low pressure metalorganic vapour phase epitaxy

Journal of Crystal Growth

Volumn 165, Issue 1-2, 1996, Pages 1-7

  Nataf, G ^a   Leroux, M ^a   Laugt S M ^a   Gibart, P ^a  

^a Ctr Rech sur l'Heteroepitaxie S   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; ELECTRIC VARIABLES MEASUREMENT; EPITAXIAL GROWTH; HALL EFFECT; HYDROCHLORIC ACID; METALLORGANIC VAPOR PHASE EPITAXY; PHASE EQUILIBRIA; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMOANALYSIS;

ANISOTROPIC GROWTH; HALL EFFECT MEASUREMENTS; LOW PRESSURE METALLORGANIC VAPOR PHASE EPITAXY; LOW TEMPERATURE PHOTOLUMINESCENCE; PATTERNED SUBSTRATES; THERMODYNAMIC ANALYSIS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030564378     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00172-8     Document Type: Article

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