Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates

Journal of Applied Physics

Volumn 99, Issue 9, 2006, Pages

  Brammertz, Guy ^a   Mols, Yves ^a   Degroote, Stefan ^a   Motsnyi, Vasyl ^a   Leys, Maarten ^a   Borghs, Gustaaf ^a   Caymax, Matty ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DIFFUSION; EPITAXIAL GROWTH; EXCITONS; GERMANIUM; PHOTOLUMINESCENCE; SPECTRUM ANALYSIS; SUBSTRATES; THICKNESS CONTROL;

ANTIPHASE BOUNDARIES; GAUSSIAN PEAKS; HETEROINTERFACE; INNER BAND GAP;

GALLIUM ALLOYS;

EID: 33646860606     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2194111     Document Type: Article

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