Selective area epitaxy of GaAs and InGaAs by ultra-high vacuum chemical vapor deposition using triethylgallium, trimethylindium, arsine, and monoethylarsine

Journal of Crystal Growth

Volumn 169, Issue 3, 1996, Pages 429-434

  Kim, Sung Bock ^a   Ro, Jeong Rae ^a   Park, Seong Ju ^b   Lee, El Hang ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; DIFFUSION IN GASES; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; SURFACE PROPERTIES;

ARSINE; MONOETHYLARSINE; SELECTIVE AREA EPITAXY; TRIETHYLGALLIUM; TRIMETHYLINDIUM;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030394688     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00413-7     Document Type: Article

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