MOVPE growth of III-V compounds for optoelectronic and electronic applications

Microelectronics Journal

Volumn 27, Issue 4-5, 1996, Pages 297-334

  Behet, M ^a   Hovel R ^a   Kohl, A ^a   Mesquida Kusters A ^a   Opitz, B ^a   Heime, K ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; OPTOELECTRONIC DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES;

DOUBLE BARRIER RESONANT TUNNELING; HETEROJUNCTION FIELD EFFECT TRANSISTOR; RESONANT TUNNELLING DIODES; WANNIER-STARK MODULATORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030189467     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2692(95)00060-7     Document Type: Review

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