Selective area growth by metal organic vapor phase epitaxy and atomic layer epitaxy using Ga2O3 as a novel mask layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 3 A, 1999, Pages 1516-1520

  Hirose, Shingo ^a   Yoshida, Akihiro ^b   Yamaura, Masaaki ^b   Kara, Kazuhiko ^b   Munekata, Hiro ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AlGaAs; Atomic layer epitaxy; Ga2O3; GaAs; Metal organic vapor phase epitaxy; Selective area growth

Indexed keywords

CRYSTAL MICROSTRUCTURE; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLITHOGRAPHY; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; SPUTTERING;

ATOMIC LAYER EPITAXY; GALLIUM OXIDE; SELECTIVE AREA GROWTH;

SEMICONDUCTOR GROWTH;

EID: 0032686332     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1516     Document Type: Article

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