Effect of SIIS on work function of self-aligned PtSi FUSI metal-gated capacitors

IEEE Transactions on Electron Devices

Volumn 53, Issue 5, 2006, Pages 1180-1185

  van Dal, Mark J H ^a   Pourtois, Geofrey ^b   Cunniffe, John ^b   Veloso, Anabela ^b   Lauwers, Anne ^b   Maex, Karen ^b   Kittl, Jeorge A ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b IMEC   (Belgium)

Author keywords

First principle simulations; Fully silicidation (FUSI); Metal gate; Platinum monosilicide (PtSi); Silicidation induced impurity segregation (SIIS); Work function

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC MATERIALS; ETCHING; FERMI LEVEL; GATES (TRANSISTOR); PLATINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

FIRST-PRINCIPLE SIMULATIONS; FULLY SISLICIDATION; PLATINUM MONOSILICIDE; SILICIDATION-INDUCED IMPURITY SEGREGATION; WORK FUNCTION;

MOS CAPACITORS;

EID: 33646047146     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.872360     Document Type: Article

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