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Volumn 44, Issue 6 PART 1, 1997, Pages 2230-2236

Low LET cross-section measurements using high energy carbon beam

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; ELECTRONIC EQUIPMENT TESTING; ENERGY TRANSFER; ION BEAMS;

EID: 0031337409     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.659040     Document Type: Article
Times cited : (28)

References (13)
  • 7
    • 0030374183 scopus 로고    scopus 로고
    • SEU cross-sections derived from a diffusion analysis
    • 43, p. 3207, 1996.
    • L.D. Edmonds, SEU cross-sections derived from a diffusion analysis, IEEE Trans. Nucl. Sei, NS43, p. 3207, 1996.
    • IEEE Trans. Nucl. Sei, NS
    • Edmonds, L.D.1
  • 10
    • 0029516457 scopus 로고    scopus 로고
    • Evaluation of the upset risk in CMOS SRAM through full three dimensional simulation
    • 42, p. 1789, 1995.
    • Y. Moreau, S. Du/ellier, J. Gasiot, Evaluation of the upset risk in CMOS SRAM through full three dimensional simulation, IEEE Trans. Nucl. Sei., NS42, p. 1789, 1995.
    • IEEE Trans. Nucl. Sei., NS
    • Moreau, Y.1    Duellier, S.2    Gasiot, J.3
  • 12
    • 0027810885 scopus 로고    scopus 로고
    • Effect of process parameter distributions and ion strike locations on SEU cross-section data
    • 40, p. 1804, 1993.
    • L.W. Massengill, M.L. Alles, S.E. Kerns, K.L. Jones, Effect of process parameter distributions and ion strike locations on SEU cross-section data, IEEE Trans. Nucl. Sci.,NS-40, p. 1804, 1993.
    • IEEE Trans. Nucl. Sci.,NS
    • Massengill, L.W.1    Alles, M.L.2    Kerns, S.E.3    Jones, K.L.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.