-
1
-
-
0029536512
-
SEE results using high energy ions
-
42, p.1797, 1995.
-
S. Duzellier, D. Falguère, L. Moulière, R. Ecoffet, J. Buisson, SEE results using high energy ions, IEEE Trans. Nucl. Sei, NS42, p.1797, 1995.
-
IEEE Trans. Nucl. Sei, NS
-
-
Duzellier, S.1
Falguère, D.2
Moulière, L.3
Ecoffet, R.4
Buisson, J.5
-
2
-
-
84937079881
-
Heavy ion test results on memories
-
1992, p. 27.
-
R. Ecoffet, S. Duzellier, D. Falguère, Heavy ion test results on memories, IEEE Radiation Effects Data Workshop, New Orleans, LA, July 1992, p. 27.
-
IEEE Radiation Effects Data Workshop, New Orleans, LA, July
-
-
Ecoffet, R.1
Duzellier, S.2
Falguère, D.3
-
3
-
-
0031343577
-
Low energy protons induced SEE effects in memories
-
44, Dec. 1997.
-
S. Duzellier, R. Ecoffet, D. Falguère, T. Nuns, L. Guibert, W. Hajdas, M.C. Calvet, Low energy protons induced SEE effects in memories, submitted to IEEE Trans. Nucl. Sei. NS44, Dec. 1997.
-
Submitted to IEEE Trans. Nucl. Sei. NS
-
-
Duzellier, S.1
Ecoffet, R.2
Falguère, D.3
Nuns, T.4
Guibert, L.5
Hajdas, W.6
Calvet, M.C.7
-
4
-
-
84962180292
-
Heavy ion/proton st results on high integrated memories
-
1993, p. 36.
-
S. Duzellier, D. Falguère, R. Ecoffet, Heavy ion/proton st results on high integrated memories, IEEE Radiation Effects Data Workshop, Snowbird, UT, July 1993, p. 36.
-
IEEE Radiation Effects Data Workshop, Snowbird, UT, July
-
-
Duzellier, S.1
Falguère, D.2
Ecoffet, R.3
-
5
-
-
0028711775
-
Space radiation evaluation of 16-Mbit DRAMs for mass memory applications
-
NS41,p. 2267, 1994.
-
P. Calvel, P. Lamothe, C. Barillot, S. Duzellier, R. Ecoffet, Space radiation evaluation of 16-Mbit DRAMs for mass memory applications, IEEE Trans. Nucl. Sei, NS41,p. 2267, 1994.
-
IEEE Trans. Nucl. Sei
-
-
Calvel, P.1
Lamothe, P.2
Barillot, C.3
Duzellier, S.4
Ecoffet, R.5
-
6
-
-
0028693954
-
SEE in-flight measurement on the MIR orbital station
-
41, p. 2346, 1994.
-
D. Falguère, S. Duzellier, R. Ecoffet, SEE in-flight measurement on the MIR orbital station, IEEE Trans. Nucl. Sei, NS41, p. 2346, 1994.
-
IEEE Trans. Nucl. Sei, NS
-
-
Falguère, D.1
Duzellier, S.2
Ecoffet, R.3
-
7
-
-
0030374183
-
SEU cross-sections derived from a diffusion analysis
-
43, p. 3207, 1996.
-
L.D. Edmonds, SEU cross-sections derived from a diffusion analysis, IEEE Trans. Nucl. Sei, NS43, p. 3207, 1996.
-
IEEE Trans. Nucl. Sei, NS
-
-
Edmonds, L.D.1
-
8
-
-
0029535998
-
Application of a Diffusion Model to SEE Cross Sections of Modern devices
-
42, p. 1772, 1995.
-
E.G. Smith, E.G. Stassinopoulos, K. Label, G. Brucker, C.M. Seidleck, Application of a Diffusion Model to SEE Cross Sections of Modern devices, IEEE Trans. Nucl. Sei., NS42, p. 1772, 1995.
-
IEEE Trans. Nucl. Sei., NS
-
-
Smith, E.G.1
Stassinopoulos, E.G.2
Label, K.3
Brucker, G.4
Seidleck, C.M.5
-
9
-
-
0027840199
-
The latch-up risk of CMOS technology in space
-
40, p. 1831, 1993.
-
Y. Moreau, H. de la Rochette, G. Bruguier, J. Gasiot, F. Pelanchon, C. Sudre, R. Ecoffet, The latch-up risk of CMOS technology in space, IEEE Trans. Nucl. Sei., NS40, p. 1831, 1993.
-
IEEE Trans. Nucl. Sei., NS
-
-
Moreau, Y.1
De La Rochette, H.2
Bruguier, G.3
Gasiot, J.4
Pelanchon, F.5
Sudre, C.6
Ecoffet, R.7
-
10
-
-
0029516457
-
Evaluation of the upset risk in CMOS SRAM through full three dimensional simulation
-
42, p. 1789, 1995.
-
Y. Moreau, S. Du/ellier, J. Gasiot, Evaluation of the upset risk in CMOS SRAM through full three dimensional simulation, IEEE Trans. Nucl. Sei., NS42, p. 1789, 1995.
-
IEEE Trans. Nucl. Sei., NS
-
-
Moreau, Y.1
Duellier, S.2
Gasiot, J.3
-
11
-
-
34648860030
-
Origins and Quantification of the SEU Critical Charge in a Submicron CMOS Technology
-
44, Dec. 1997.
-
C. Detcheverry, D. Dachs, E. Lorfevre, C. Sudre, G. Bruguier, J-M. Palau, J. Gasiot, Origins and Quantification of the SEU Critical Charge in a Submicron CMOS Technology, submitted to IEEE Trans. Nucl. Sei. NS44, Dec. 1997.
-
Submitted to IEEE Trans. Nucl. Sei. NS
-
-
Detcheverry, C.1
Dachs, D.2
Lorfevre, E.3
Sudre, C.4
Bruguier, G.5
Palau, J.-M.6
Gasiot, J.7
-
12
-
-
0027810885
-
Effect of process parameter distributions and ion strike locations on SEU cross-section data
-
40, p. 1804, 1993.
-
L.W. Massengill, M.L. Alles, S.E. Kerns, K.L. Jones, Effect of process parameter distributions and ion strike locations on SEU cross-section data, IEEE Trans. Nucl. Sci.,NS-40, p. 1804, 1993.
-
IEEE Trans. Nucl. Sci.,NS
-
-
Massengill, L.W.1
Alles, M.L.2
Kerns, S.E.3
Jones, K.L.4
-
13
-
-
0346713420
-
-
vol 25, no. 5/6, Academic Press Inc, Sept/Nov 1980.
-
W.W.Wilke, J.R. Birkelund, H.J. Wollersheim, A.D. Hoover, J.R. Huizenga, W.U. Schröder, L.E Tubbes, Atomic data and nuclear data tables, vol 25, no. 5/6, Academic Press Inc, Sept/Nov 1980.
-
Atomic data and nuclear data tables
-
-
Birkelund, J.R.1
Wollersheim, H.J.2
Hoover, A.D.3
Huizenga, J.R.4
Schröder, W.U.5
Tubbes, L.E.6
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