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Volumn 35, Issue 2 B, 1996, Pages
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Ultra-large-scale step-free terraces formed at the bottom of craters on vicinal Si(111) surfaces
a
a
NTT CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CRYSTAL GROWTH;
HEATING;
LITHOGRAPHY;
OXIDATION;
PHASE TRANSITIONS;
PYROMETERS;
QUENCHING;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING SILICON;
SILICON WAFERS;
SURFACE STRUCTURE;
CRATERS;
SELF CONTROLLED PLANARIZATION;
STEP FREE TERRACE;
SURFACES;
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EID: 0030082483
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.35.L241 Document Type: Article |
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Times cited : (52)
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References (8)
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