SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 332, Issue 1-2, 1998, Pages 375-378

MOS capacitor characteristics of plasma oxide on partially strained SiGeC films

(5) Ray, S K a Bera, L K a Maiti, C K a John, S b Banerjee, S K b

a INDIAN INSTITUTE OF TECHNOLOGY (India)

b The University of Texas at Austin (United States)

Author keywords

MOS capacitors; Plasma oxide; SiGeC; Silicon heterostructures

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRAPS; FILM GROWTH; HETEROJUNCTIONS; MOS CAPACITORS; OXIDATION; PLASMA APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS;

CURRENT STRESSING;

SEMICONDUCTING FILMS;

EID: 0032476249 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)01040-2 Document Type: Article

Times cited : (4)

References (15)

1
- 84864384696
- R. People, IEEE J. Quantum Electron. 22 (1986) 1696.
- (1986) IEEE J. Quantum Electron. , vol.22 , pp. 1696
- People, R.¹

2
- 33746991507
- B.S. Meyerson, Proc. IEEE 80 (1992) 1592.
- (1992) Proc. IEEE , vol.80 , pp. 1592
- Meyerson, B.S.¹

3
- 0028383440
- J. Welser, J.L. Hoyt, J.F. Gibbons, IEEE Electron Dev. Lett. 15 (1994) 100.
- (1994) IEEE Electron Dev. Lett. , vol.15 , pp. 100
- Welser, J.¹ Hoyt, J.L.² Gibbons, J.F.³

4
- 0027629428
- K. Ismail, S. Rishton. J.O. Chu, K. Chan, B.S. Meyerson, IEEE Electron Device Lett. 14 (1996) 348.
- (1996) IEEE Electron Device Lett. , vol.14 , pp. 348
- Ismail, K.¹ Rishton, S.² Chu, J.O.³ Chan, K.⁴ Meyerson, B.S.⁵

5
- 0029386432
- S.C. Jain, H.J. Osten, B. Dietrich, H. Rucker, Semicond. Sci. Technol. 10 (1995) 1289.
- (1995) Semicond. Sci. Technol. , vol.10 , pp. 1289
- Jain, S.C.¹ Osten, H.J.² Dietrich, B.³ Rucker, H.⁴

6
- 0343511339
- K. Eberl, S.S. Iyer, S. Zollner, J.C. Tsang, F.K. Legoues, Appl. Phys. Lett. 60 (1992) 3033.
- (1992) Appl. Phys. Lett. , vol.60 , pp. 3033
- Eberl, K.¹ Iyer, S.S.² Zollner, S.³ Tsang, J.C.⁴ Legoues, F.K.⁵

7
- 0010340511
- H.J. Osten, Mater. Sci. Eng. B 36 (1996) 268.
- (1996) Mater. Sci. Eng. B , vol.36 , pp. 268
- Osten, H.J.¹

8
- 0347564509
- J. Mi, P. Warren, M. Gailhanou, K.D. Ganjere, M. Dutoit, P.H. Joneau, R. Houriet, J. Vac. Sci. Technol. B 14 (1996) 1650.
- (1996) J. Vac. Sci. Technol. B , vol.14 , pp. 1650
- Mi, J.¹ Warren, P.² Gailhanou, M.³ Ganjere, K.D.⁴ Dutoit, M.⁵ Joneau, P.H.⁶ Houriet, R.⁷

9
- 0029543599
- A. St. Amour, C.W. Liu, J.C. Sturm, Y. Lacroix, M.L.W. Thewalt, Appl. Phys. Lett. 67 (1995) 3915.
- (1995) Appl. Phys. Lett. , vol.67 , pp. 3915
- St. Amour, A.¹ Liu, C.W.² Sturm, J.C.³ Lacroix, Y.⁴ Thewalt, M.L.W.⁵

10
- 21544446451
- J.W. Strane, H.J. Stein, S.R. Lee, B.L. Doyle, S.T. Picraux, J.W. Mayer, Appl. Phys. Lett. 63 (1993) 2786.
- (1993) Appl. Phys. Lett. , vol.63 , pp. 2786
- Strane, J.W.¹ Stein, H.J.² Lee, S.R.³ Doyle, B.L.⁴ Picraux, S.T.⁵ Mayer, J.W.⁶

11
- 4243936725
- S.K. Ray, S. John, S. Oswal, S.K. Banerjee, IEEE IEDM Tech. Dig. p. (1996) 261.
- (1996) IEEE IEDM Tech. Dig. , pp. 261
- Ray, S.K.¹ John, S.² Oswal, S.³ Banerjee, S.K.⁴

12
- 0348194080
- Proc. MRS Fall Meeting, Boston, MA
- S. John, E.J. Quinones, B. Ferguson, S.K. Ray, C.B. Mullins, S.K. Banerjee, Proc. MRS Fall Meeting, Boston, MA., in "structure and evolution of surfaces" 40 (1996) 275.
- (1996) Structure and Evolution of Surfaces , vol.40 , pp. 275
- John, S.¹ Quinones, E.J.² Ferguson, B.³ Ray, S.K.⁴ Mullins, C.B.⁵ Banerjee, S.K.⁶

13
- 0001213855
- S.K. Ray, C.K. Maiti, S.K. Lahiri, N.B. Chakrabarti, J. Vac. Sci. Technol. B 10 (1992) 1139.
- (1992) J. Vac. Sci. Technol. B , vol.10 , pp. 1139
- Ray, S.K.¹ Maiti, C.K.² Lahiri, S.K.³ Chakrabarti, N.B.⁴

14
- 0001524603
- M.Y. Hao, B. Maiti, J.C. Lee, Appl. Phys. Lett. 64 (1994) 2102.
- (1994) Appl. Phys. Lett. , vol.64 , pp. 2102
- Hao, M.Y.¹ Maiti, B.² Lee, J.C.³

15
- 0001760861
- P.W. Li, E.S. Yang, Appl. Phys. Lett. 63 (1993) 2938.
- (1993) Appl. Phys. Lett. , vol.63 , pp. 2938
- Li, P.W.¹ Yang, E.S.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.