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Volumn 94, Issue 5, 2003, Pages 3239-3248

Rigorous analysis of two-level charge pumping: Application to the extraction of interface trap concentration versus energy profiles in metal-oxide-semiconductor transistors

(1) Bauza, D a

a Grenoble INP Phelma (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; ELECTRIC CURRENTS; EXTRACTION; FERMI LEVEL; GATES (TRANSISTOR); SILICA; SPECTROSCOPIC ANALYSIS;

CHARGE PUMPING;

MOS DEVICES;

EID: 0141857456 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1595138 Document Type: Article

Times cited : (31)

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