Ternary SiGeC alloys: Growth and properties of a new semiconducting material

Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 93-97

  Osten, H Jörg ^a   Kim, Myeongcheol ^a   Lippert, G ^a   Zaumseil, P ^a  

^a IHP   (Germany)

Author keywords

Alloys; Growth mechanism; Semiconductors; SiGeC

Indexed keywords

CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0003127071     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09250-4     Document Type: Article

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