Hole mobility in ultrathin body SOI pMOSFETs with SiGe or SiGeC channels

IEEE Electron Device Letters

Volumn 27, Issue 6, 2006, Pages 466-468

  Hållstedt, Julius ^a   von Haartman, M ^a   Hellstrom P E ^a   Ostling M ^a   Radamsson, H H ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Fully depleted (FD); Heterostructure; Mobility; MOSFETs; SiGe; SiGeC; Silicon on insulator (SOI) technology

Indexed keywords

HETEROJUNCTIONS; HOLE MOBILITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

DRIVE CURRENT; FULLY DEPLETED SILICON; SILICON CHANNEL DEVICES; ULTRATHIN SILICON-ON-INSULATOR; ULTRATHIN SUBSTRATES;

MOSFET DEVICES;

EID: 33744733389     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.874763     Document Type: Article

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