1 / f noise in Si0.8Ge0.2 pMOSFETs under Fowler-Nordheim stress

IEEE Transactions on Electron Devices

Volumn 50, Issue 4, 2003, Pages 1152-1156

  Song, Young Joo ^a   Lim, Jung Wook ^a   Mheen, Bongki ^a   Kim, Sang Hoon ^a   Bae, Hyun Chul ^a   Kang, Jin Young ^a   Kim, Jeong Hoon ^b   Song, Jong In ^b   Park, Kyung Wan ^a   Shim, Kyu Hwan ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

1 f Noise; Fowler Nordheim stress; Oxide trap density; SiGe pMOSFET

Indexed keywords

FERMI LEVEL; SEMICONDUCTING SILICON COMPOUNDS; SIGNAL NOISE MEASUREMENT; STRESS ANALYSIS;

OXIDE TRAP DENSITY;

MOSFET DEVICES;

EID: 0037480716     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.812477     Document Type: Review

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