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Volumn 67, Issue , 1995, Pages 3915-
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Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1-x-yGexCy alloy layers on Si (100)
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Author keywords
[No Author keywords available]
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Indexed keywords
AUGER ELECTRON SPECTROSCOPY;
CARBON;
COMPOSITION EFFECTS;
ENERGY GAP;
PHOTOLUMINESCENCE;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING SILICON;
STRAIN;
THIN FILMS;
X RAY CRYSTALLOGRAPHY;
DEFECT FREE FILMS;
PSEUDOMORPHIC FILMS;
SILICON GERMANIUM CARBIDE;
VEGARDS LAW;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 0029543599
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.115316 Document Type: Article |
Times cited : (108)
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References (16)
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