|
Volumn 41, Issue 2, 2005, Pages 1031-1033
|
Wet-etching characteristics of Ge2Sb2Te5 thin films for phase-change memory
|
Author keywords
Etching solution; Ovonic unified memory (OUM); Phase change memory; Phase change ram (PRAM); Random access memories (RAMS); Wet etching
|
Indexed keywords
AMORPHOUS FILMS;
ANNEALING;
ATOMIC FORCE MICROSCOPY;
CRYSTALLIZATION;
ETCHING;
GERMANIUM COMPOUNDS;
MORPHOLOGY;
NITRIC ACID;
RANDOM ACCESS STORAGE;
ETCHING SOLUTIONS;
OVONIC UNIFIED MEMORY (OUM);
PHASE CHANGE RAM (PRAM);
PHASE-CHANGE MEMORY;
WET ETCHING;
THIN FILMS;
|
EID: 14544307824
PISSN: 00189464
EISSN: None
Source Type: Journal
DOI: 10.1109/TMAG.2004.842136 Document Type: Article |
Times cited : (27)
|
References (9)
|