Effect of nitrogen incorporation on improvement of leakage properties in high-k HfO2 capacitors treated by N2-plasma

Applied Physics Letters

Volumn 87, Issue 13, 2005, Pages 1-3

  Seong, Nak Jin ^a   Yoon, Soon Gil ^a   Yeom, Seung Jin ^b   Woo, Hyun Kyung ^b   Kil, Deok Sin ^b   Roh, Jae Sung ^b   Sohn, Hyun Chul ^b  

^a Chungnam National University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; PERMITTIVITY; PLASMA APPLICATIONS; THIN FILMS;

GAP STATES; LEAKAGE PROPERTIES; PLASMA TREATMENT;

NITROGEN;

EID: 28344433409     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2053369     Document Type: Article

References (8)

1. J. H. Lee, J. H. Lee, Y. S. Kim, H. S. Jung, N. I. Lee, H. K. Kang, and K. P. Suh, VLSI Tech. Dig. 2002, 114 (2002).
2. Y. C. Yeo, P. Ranade, Q. Lu, R. Lin, T. J. King, and C. Hu, VLSI Tech. Dig. 2001, 49 (2001).
3. W. Zhu, T. P. Ma, T. Tamagawa, Y. Di, J. Kim, R. Carruthers, M. Gibson, and T. Furukawa, Tech. Dig. - Int. Electron Devices Meet. 2001, 463 (2001).
4. R. M. Fleming, D. V. Iang, C. D. W. Jones, M. L. Steigerwald, D. W. Murphy, G. B. Alers, Y.-H. Wong, R. B. Van Dover, J. R. Kwo, and A. M. Sergent, J. Appl. Phys. 88, 850 (2000).
5. C. H. Choi, S. J. Rhee, T. S. Jeon, N. Lu, J. H. Sim, R. Clark, M. Niwa, and D. L. Kwong, Tech. Dig. - Int. Electron Devices Meet. 2002, 857 (2002).
6. M. Koyama, A. Kaneko, T. Ino, M. Koike, Y. Kamata, R. Iijima, Y. Kamimuta, A. Takashima, M. Suzuki, C. Hongo, S. Inumiya, M. Takayanagi, and A. Nishiyama, Tech. Dig. - Int. Electron Devices Meet. 2002, 849 (2002).
7. K. J. Choi, J. H. Kim, and S. G. Yoon, Electrochem. Solid-State Lett. 7, F59 (2004).
8. N. Umezawa, K. Shiraishi, T. Ohno, H. Watanabe, T. Chikyow, K. Torii, K. Yamada, H. Kitajima, and T. Arikado, Appl. Phys. Lett. 86, 143507 (2005).