The effect of band offset on the retention properties of metal-ferroelectric (PbZr0.53Ti0.47O3) -insulator (Dy2O3,Y2O3) -semiconductor capacitors and field effect transistors

Applied Physics Letters

Volumn 91, Issue 12, 2007, Pages

  Su, Yu Di ^a   Shih, Wen Chieh ^a   Lee, Joseph Ya Min ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CONDUCTION BANDS; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; LEAD ALLOYS; RAPID THERMAL ANNEALING;

ANNEALING TEMPERATURE; CAPACITOR-VOLTAGE (C-V) MEMORY; RETENTION TIME; SEMICONDUCTOR CAPACITORS;

ELECTRIC INSULATORS;

EID: 34648818262     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2784203     Document Type: Article

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