An experimental investigation into soft-pad grinding of wire-sawn silicon wafers

International Journal of Machine Tools and Manufacture

Volumn 44, Issue 2-3, 2004, Pages 299-306

  Pei, Z J ^a   Kassir, S ^b   Bhagavat, Milind ^c   Fisher, Graham R ^c  

^a Sunflower Networking Group   (United States)

^b Strasbaugh Inc   (United States)

^c MEMC Electronic Materials Inc   (United States)

Author keywords

Grinding; Lapping; Machining; Material removal; Semiconductor material; Silicon wafer; Slicing

Indexed keywords

ETCHING; FINITE ELEMENT METHOD; LAPPING; MICROPROCESSOR CHIPS; POLISHING; QUALITY CONTROL; SILICON WAFERS;

SOFT-PAD GRINDING; WIRE-SAWING;

GRINDING (COMMINUTION);

EID: 0346724502     PISSN: 08906955     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijmachtools.2003.09.006     Document Type: Article

References (36)

1. Van Zant P. Microchip Fabrication. 2000;McGraw-Hill, New York, NY. p. 37.
2. Tricard M., Kassir S., Herron P., Pei Z.J. New abrasive trends in manufacturing of silicon wafers. Proceedings of Silicon Machining Symposium, American Society For Precision Engineering, St. Louis, MO, April: 1998.
3. Silicon wafer shipments, revenue fell sharply in 2001, East Bay Business Times, February 12, 2002, Available from
4. B. Mcllvaine, A great 2000, painful 2001, and hope for next year, 2002, Available from
5. Bawa M.S., Petro E.F., Grimes H.M. Fracture strength of large diameter silicon wafers. Semiconductor International. 18:(11):1995;115-118.
6. T. Fukami, H. Masumura, K. Suzuki, H. Kudo, Method of manufacturing semiconductor mirror wafers, European Patent Application EP0782179A2, 1997.
7. Pei Z.J. A study on surface grinding of 300 mm silicon wafers. International Journal of Machine Tools and Manufacture. 42:(3):2002;385-393.
8. Pei Z.J., Strasbaugh A. Fine grinding of silicon wafers. International Journal of Machine Tools and Manufacture. 41:(5):2001;659-672.
9. Pei Z.J., Strasbaugh A. Fine grinding of silicon wafers: designed experiments. International Journal of Machine Tools and Manufacture. 42:(3):2002;395-404.
10. Tonshoff H.K., Schmieden W.V., Inasaki I., Konig W., Spur G. Abrasive machining of silicon. Annals of CIRP. 39:(2):1990;621-630.
11. R. Vandamme, Y. Xin, Z.J. Pei, Method of processing semiconductor wafers, US Patent 6,114,245, 2000.
12. Werner P.G., Kenter I.M. Comparative study of advanced slicing techniques for silicon. Chandrasekar S., Komanduri R., Daniels W., Rapp W. Proceedings of Intersociety Symposium on Machining of Advanced Ceramic Materials and Components: 1988;The American Society of Mechanical Engineers, New York, NY.
13. Buttner A. I.D. sawing - diameters increase. Industrial Diamond Review. (2):1985;77-79.
14. T. Kato, H. Masumura, S. Okuni, H. Kudo, Method of manufacturing semiconductor wafers, European patent application EP0798405A2, 1997.
15. Yasunaga N., Takashina M., Itoh T. Development of sequential grinding-polishing process applicable to large-size Si wafer finishing. Proceedings of the International Symposium on Advances in Abrasive Technology, Sydney, Australia, July 8-10: 1997;96-100.
16. Specifications for polished mono-crystalline silicon wafers. SEMI M1-0600. 2000;Semiconductor Equipment and Materials International, San Jose, CA.
17. Tonshoff H.K., Karpuschewski B., Hartmann M., Spengler C. Grinding-and-slicing technique as an advanced technology for silicon wafer slicing. Machining Science and Technology. 1:(1):1997;33-47.
18. Dudley J.A. Abrasive technology for wafer lapping. Microelectronic Manufacturing and Testing. 9:(4):1986;1-6.
19. Marinescu I.D., Shoutak A., Spanu C.E. Technological assessment of double side lapping of silicon. Abrasives Magazine. (December/January):2002;5-9.
20. G. Fisher, Z.J. Pei, Challenges for 300 mm polished wafer manufacturers, Proceedings of the Silicon Wafer Symposium, Portland, OR, September 28-29, 1998, pp. J1-J9.
21. H. Tsuya, Overview on silicon manufacturing technology barriers, Silicon Wafer Symposium, Portland, OR, September 28-29, 1998, pp. H1-H10.
22. Dietrich H., Bergholz W., Dubbert S. Three hundred-mm wafers: a technological and an economical challenge. Microelectronic Engineering. 45:1999;183-190.
23. Eda H., Zhou L., Nakano H., Kondo R., Shimizu J. Development of single step grinding system for large scale φ300 Si wafers: a total integrated fixed-abrasive solution. CIRP Annals - Manufacturing Technology. 50:(1):2001;225-228.
24. Liu W.J., Pei Z.J., Xin X.J. Finite element analysis for grinding and lapping of wire-sawn silicon wafers. Journal of Materials Processing Technology. 129:(1-3):2002;2-9.
25. H.K. Shinetsu, Semiconductor wafer surface grinding method - involves reducing suction pressure of semiconductor wafer to base plate during generation of spark during grinding process, Japanese Patent JP9248758A, 1997.
26. S. Kassir, T. Walsh, Grinding process and apparatus for planarizing sawed wafers, US Patent 5,964,646, 1999.
27. Xin X.J., Liu W.J., Pei Z.J. Modeling of waviness reduction in silicon wafer grinding by finite element method. Proceedings of the International Conference on Modeling and Analysis of Semiconductor Manufacturing, Tempe, AZ, April 10-12: 2002;24-29.
28. Pei Z.J., Fisher G. Surface grinding in silicon wafer manufacturing. Transactions of North American Manufacturing Research Institute SME. 29:2001;279-286.
29. Pietsch G.J., Kerstan M. Simultaneous double-disk grinding-machining process for flat, low-damage and material-saving silicon wafer substrate manufacturing. Proceedings of the Second International Conference of the European Society for Precision Engineering and Nanotoechnology, Turin, Italy, May 27-31:2001;644-648 Euspen, Bedford, UK.
30. Xin X.J., Pei Z.J., Liu W.J. Finite element analysis on soft-pad grinding of wire-sawn silicon wafers. CD-ROM Proceedings of the 2002 International Mechanical Engineering Congress and Exposition, New Orleans, LA, November 17-22. vol. 2:2002.
31. 5 factorial design. CD-ROM Proceedings of the 12th Annual Industrial Engineering Research Conference (IERC-2003), Portland, Oregon, May 18-20: 2003.
32. S. Hahn, K. Kugimiya, M. Yamashita, P.R. Blaustein, K. Takahashi, Characterization of mirror-like wafer surfaces using the magic mirror method, Journal of Crystal Growth 103 (1-4) (1990) 423-432.
33. Hahn S., Kugimiya K., Vojtechovsky K., Sifalda M., Yamashita M., Blaustein P.R., Takahashi K. Characterization of mirror-polished Si wafers and advanced Si substrate structures using the magic mirror method. Semiconductor Science and Technology. 7:(1A):1992;80-85.
34. Shiue C.C., Lie K.H., Blaustein P.R. Characterization of deformations and texture defects on polished wafers of III-V compound crystals by the magic mirror method. Semiconductor Science and Technology. 7:(1A):1992;95-97.
35. Pei Z.J., Xin X.J., Liu W.J. Finite element analysis for grinding of wire-sawn silicon wafers: a designed experiment. International Journal of Machine Tools and Manufacture. 43:(1):2003;7-16.
36. X.K. Sun, Z.J. Pei, X.J. Xin, M. Fouts, Waviness removal in grinding of wire-sawn silicon wafers: 3D finite element analysis with designed experiments, International Journal of Machine Tools and Manufacture, 44(1) (2004) 11-19.