Synchrotron X-ray topography of lattice undulation of bonded Silicon-on-insulator wafers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 3, 2004, Pages 1081-1087

  Fukuda, Kazunori ^a,c   Yoshida, Takayoshi ^a   Shimura, Takayoshi ^a   Yasutake, Kiyoshi ^a   Umeno, Masataka ^b  

^a OSAKA UNIVERSITY   (Japan)

^b FUKUI UNIVERSITY OF TECHNOLOGY   (Japan)

^c UNIVERSITY OF HYOGO   (Japan)

Author keywords

Bonded SOI wafer; Lattice undulation; Silicon on insulator; Synchrotron radiation; Thin film; X ray topography

Indexed keywords

COMPUTER SIMULATION; CRYSTAL LATTICES; DIFFRACTION; GEOMETRY; SILICON WAFERS; SYNCHROTRON RADIATION; THICKNESS CONTROL; THIN FILMS; X RAY ANALYSIS;

BONDED SOI WAFER; GRANULAR PATTERN; LATTICE UNDULATION; X-RAY TOPOGRAPHY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 2442649455     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1081     Document Type: Article

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