Single-electron program/erase tunnel events in nanocrystal memories

IEEE Transactions on Nanotechnology

Volumn 6, Issue 1, 2007, Pages 35-42

  Corso, Domenico ^a   Pace, Calogero ^a,b   Crupi, Felice ^a,b   Lombardo, Salvatore A ^a  

^a CNR   (Italy)

^b UNIVERSITY OF CALABRIA   (Italy)

Author keywords

Nanotechnology; Quantum dots; Semiconductor memories

Indexed keywords

ELECTRON TRAPS; ELECTRON TUNNELING; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; PERCOLATION (COMPUTER STORAGE); SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; THRESHOLD VOLTAGE;

NANOCRYSTAL MEMORIES; SILICON DOTS; SINGLE-ELECTRON PROGRAMS; TUNNEL EVENTS;

DATA STORAGE EQUIPMENT;

EID: 33846683276     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2006.888546     Document Type: Article

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