Threshold-voltage statistics and conduction regimes in nanocrystal memories

IEEE Electron Device Letters

Volumn 27, Issue 5, 2006, Pages 409-411

  Gusmeroli, Riccardo ^a   Spinelli, Alessandro S ^a   Compagnoni, Christian Monzio ^a   Ielmini, Daniele ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

Nanocrystal (NC) memories; Percolative conduction; Semiconductor device modeling

Indexed keywords

COMPUTER SIMULATION; DATA STORAGE EQUIPMENT; MONTE CARLO METHODS; PERCOLATION (COMPUTER STORAGE); THRESHOLD VOLTAGE;

NANOCRYSTAL MEMORIES; PERCOLATION EFFECTS; PERCOLATIVE CONDUCTION; THRESHOLD-VOLTAGE STATISTICS;

SEMICONDUCTOR DEVICE MODELS;

EID: 33646239155     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.873754     Document Type: Article

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