Anomalously large threshold voltage fluctuation by complex random telegraph signal in floating gate flash memory

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Tega, Naoki ^a   Miki, Hiroshi ^a   Osabe, Taro ^a   Kotabe, Akira ^a   Otsuga, Kazuo ^a   Kurata, Hideaki ^a   Kamohara, Shiro ^b   Tokami, Kenji ^b   Ikeda, Yoshihiro ^b   Yamada, Renichi ^a  

^a HITACHI LTD   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; TELEGRAPH; THRESHOLD VOLTAGE;

FLOATING GATE FLASH MEMORY; INTERNATIONAL (CO); RANDOM TELEGRAPH SIGNAL (RTS); THRESHOLD VOLTAGE FLUCTUATION;

FLASH MEMORY;

EID: 46149101236     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346821     Document Type: Conference Paper

References (3)

1. M. Agostinelli et.al., IEDM Tech. Dig., pp.671-674, 2005
2. A.Asenov et.al., IEDM Tech. Dig., pp.279-282, 2000
3. M. J. Kriton and M. J. Uren, Adv. Phys., 38, 4, pp.367-468, 1989