Highly reliable high-brightness GaN-based flip chip LEDs

IEEE Transactions on Advanced Packaging

Volumn 30, Issue 4, 2007, Pages 752-757

  Chang, S J ^a   Chen, W S ^a   Shei, S C ^b   Ko, T K ^a   Shen, C F ^a   Hsu, Y P ^a   Chang, C S ^c   Tsai, J M ^a   Lai, W C ^a   Lin, A J ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

^c Epitech Technology Corporation   (Taiwan)

Author keywords

Flip chip (FC); Flip chip devices; Gallium compounds; GaN; ITO Ni Ag; Light emitting diode (LED); Light emitting diodes

Indexed keywords

ELECTRIC PROPERTIES; FLIP CHIP DEVICES; LUMINANCE; OHMIC CONTACTS; OPTICAL PROPERTIES; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM COMPOUNDS;

FLIP CHIP LEDS; REFLECTIVE MIRROR; TRANSPARENT OHMIC CONTACTS;

LIGHT EMITTING DIODES;

EID: 36349012554     PISSN: 15213323     EISSN: None     Source Type: Journal    
DOI: 10.1109/TADVP.2007.898510     Document Type: Article

References (29)

1. T. Akasaka, H. Gotoh, T. Saito, and T. Makimoto, High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underling layers, Appl. Phys. Lett., vol. 85, pp. 3089-3091, 2004.
2. S. Nakamura and M. Senoh, Superbright green InGaN singlequantum- well-structure light-emitting diodes, Jpn. J. Appl. Phys. Lett., vol. 34, pp. L1332-L1335, 1995.
3. S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, and U. H. Liaw, InGaN/GaN multiquantum well blue and green light emitting diodes, IEEE J. Sel. Top. Quan. Electron., vol. 8, pp. 278-283, 2002.
4. E. F. Schubert and J. K. Kim, Solid-state light sources getting smart, Science, vol. 308, pp. 1274-1278, 2005.
5. Y. J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee, T. C. Lu, H. C. Kuo, and S. C. Wang, Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates, IEEE Photonics Technol. Lett., vol. 18, no. 10, pp. 1152-1154, May 2006.
6. W. H. Lan, Wavelength shift of gallium nitride light emitting diode with p-down structure, IEEE Trans. Electron Devices, vol. 52, no. 6, pp. 1217-1219, Jun. 2005.
7. W. K.Wang, D. S.Wuu, S. H. Lin, P. Han, R. H. Horng, T. C. Hsu, D. T. C. Huo, M. J. Jou, Y. H. Yu, and A. K. Lin, Efficiency improvement of near-ultraviolet InGaN LEDs using patterned sapphire substrates, IEEE J. Quantum Electron., vol. 41, no. 11, pp. 1403-1409, Nov. 2005.
8. S. Nakamura, M. Senoh, S. Nagahama, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and T. Mukai, Violet InGaN/ GaN/AIGaN-based laser diodes operable at 50 °C with a fundamental transverse mode, Jpn. J. Appl. Phys. Lett., vol. 38, pp. L226-L229, 1999.
9. N. Biyikli, I. Kimukin, O. Aytur, and E. Ozbay, Solar-blind AlGaN-based p-i-n photodiodes with low dark current and high detectivity, IEEE Photonics Technol. Lett., vol. 16, no. 7, pp. 1718-1720, Jul. 2004.
10. S. J. Chang, T. K. Ko, Y. K. Su, Y. Z. Chiou, C. S. Chang, S. C. Shei, J. K. Sheu, W. C. Lai, Y. C. Lin, W. S. Chen, and C. F. Shen, GaN-based p-i-n sensors with ITO contacts, IEEE Sensors J., vol. 6, no. 2, pp. 406-411, Apr. 2006.
11. S. J. Chang, C. H. Kuo, Y. K. Su, L. W.Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, and J. M. Tsai, 400 nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes, IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 744-748, Jul./Aug. 2002.
12. C. F. Shih, N. C. Chen, P. H. Chang, and K. S. Liu, Effect of surface electronic states of p-type GaN on the blue-light-emitting diodes, J. Electrochem. Soc., vol. 152, pp. G816-G818, 2005.
13. S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, Y. C. Lin, S. C. Shei, H. M. Lo, H. Y. Lin, and J. C. Ke, Highly reliable nitride based LEDs with SPS + ITO upper contacts, IEEE J. Quantum Electron., vol. 39, no. 11, pp. 1439-1443, Nov. 2003.
14. ++ -SPS upper contact, IEEE Tran. Electron Devices, vol. 50, no. 11, pp. 2208-2212, Nov. 2003.
15. A. Chitnis, J. Sun, V. Mandavilli, R. Pachipulusu, S. Wu, M. Gaevski, V. Adivarahan, J. P. Zhang, M. A. Khan, A. Sarua, and M. Kuball, Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm, Appl. Phys. Lett., vol. 81, pp. 3491-3493, 2002.
16. M. Koike, N. Shibata, H. Kato, and Y. Takahashi, Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications, IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 2, pp. 271-277, Mar./Apr. 2002.
17. S. J. Chang, C. S. Chang, Y. K. Su, C. T. Lee, W. S. Chen, C. F. Shen, Y. P. Hsu, S. C. Shei, and H. M. Lo, Nitride-based flip-chip ITO LEDs, IEEE Tran. Adv. Packag., vol. 28, no. 2, pp. 273-277, May 2005.
18. J. R. Lee, S. L. Na, J. H. Jeong, S. N. Lee, J. S. Jang, S. H. Lee, J. J. Jung, J. O. Song, T. Y. Seong, and S. J. Park, Low resistance and high reflectance Pt/Rh contacts to p-type GaN for GaN-based flip chip light-emitting diodes, J. Electrochem. Soc., vol. 152, pp. G92-G94, 2005.
19. J. Song, D. S. Lee, J. S. Kwak, O. H. Nam, Y. Park, and T. Y. Seong, Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes, IEEE Photon. Technol. Lett. vol. 16, pp. 1450-1452, 2004.
20. J. C. Bha, A. Kim, D. Collins, R. Fletcher, R. Khare, and S. Rudaz, High efficiency monochromatic and white InGaN flip-chip dice, in Institute Phys. Conf. Series, 2002, vol. 170, pp. 243-248.
21. S. J. Chang, W. S. Chen, Y. C. Lin, C. S. Chang, T. K. Ko, Y. P. Hsu, C. F. Shen, J. M. Tsai, and S. C. Shei, Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors, IEEE Trans. Adv. Packag., vol. 29, no. 3, pp. 403-408, Aug. 2006.
22. W. S. Chen, S. C. Shei, S. J. Chang, Y. K. Su, W. C. Lai, C. H. Kuo, Y. C. Lin, C. S. Chang, T. K. Ko, Y. P. Hsu, and C. F. Shen, Rapid thermal annealed InGaN/GaN flip-chip LEDs, IEEE Tran. Electron Devices, vol. 53, no. 1, pp. 32-37, Jan. 2006.
23. R. H. Huang, D. S. Wuu, Y. C. Lien, and W. H. Lan, Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN, Appl. Phys. Lett., vol. 79, pp. 2925-2927, 2001.
24. C. S. Chang, S. J. Chang, Y. K. Su, Y. Z. Chiou, Y. C. Lin, Y. P. Hsu, S. C. Shei, H. M. Lo, J. C. Kei, S. C. Chen, and C. H. Liu, InGaN/GaN light emitting diodes with rapid thermal annealed Ni/ITO p-contacts, Jpn. J. Appl. Phys., vol. 42, no. 6A, pp. 3324-3327, Jun. 2003.
25. C. Y. Hu, Z. X. Qin, Z. Z. Chen, Z. J. Yang, T. J. Yu, X. D. Hu, K. Wu, Q. J. Jia, H. H. Wang, and G. Y. Zhang, Influence of various annealing temperatures on microstructure evolution of oxidized Ni/Au ohmic contact to p-GaN studied by synchrotron X-ray diffraction, J. Crystal Growth, vol. 285, pp. 333-338, 2005.
26. C. Y. Hu, Z. X. Qin, Z. Z. Chen, H. Yang, K.Wu, Q.Wang, Z. J. Yang, T. J. Yu, X. D. Hu, and G. Y. Zhang, Microstructure evolution of oxidized Ni/Au ohmic contacts to p-GaN studied by x-ray diffraction, Mater. Sci. Semicond. Proc., vol. 8, pp. 515-519, 2005.
27. H. W. Jang and J. L. Lee, Mechanism for ohmic contact formation of Ni/ Ag contacts on p-type GaN, Appl. Phys. Lett., vol. 85, pp. 5920-5922, 2004.
28. J. O. Song, J. S. Kwak, Y. Park, and T. Y. Seong, Ohmic and degradation mechanisms of Ag contacts on p-type GaN, Appl. Phys. Lett., vol. 86, 2005.
29. Y. Xi and E. F. Schubert, Junction temperature measurement in GaN ultraviolet light emitting diodes using diode forward voltage method, Appl. Phys. Lett., vol. 85, pp. 2163-2165, 2004.